Prix Mahar Schützenberger

I was awarded the Prix Mahar Schützenberger in 2018. This prize given by the association of Franco-Indonesian for the development of Science (AFIDES) to some Indonesian PhD students in France. This price is awarded based on scientific merit (papers, presentations, conferences: posters, orals, collaborations, etc.) and extra development activities (involvement in scientific organizations, students organizations, conference organizations, etc). The event took place at the Indonesian Embassy for France in Paris on the 3rd May 2018.

prix mahar

http://www-igm.univ-mlv.fr/~berstel/Mps/Afides/laureats2018.html

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Oral Conferences

  1. MOFs Conference 2016, Long Beach, California, USA. The slide of my presentation can be downloaded here: MOF 2016 California – 120916 – Rifan HARDIAN
  2. PhD Day 2017, MADIREL, France. The slide of my presentation can be downloaded here: phd day RH_mvc_060717
  3. JCAT 47 – 47th French Conference on Calorimetry and Thermal Analysis, Anglet, France. The slide of my presentation can be downloaded here: JCAT presentation 180516 RH
  4. International Workshop on Nanotechnology (IWoN), Indonesia.
  5. Short communication at Institut Neel, CNRS, France.

 

 

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Marie-Sklodowska Curie Actions (MSCA)

MSCA is one prestigious and generous funding provided by European Commission to support research and training for young as well as experienced researchers. This fund can be used either in the form of PhD study, postdoc, or training.

I was awarded MSCA fellowship to carry out PhD study at MADIREL Lab, Aix-Marseille University, France under the project DEFNET. This fellowship has allowed me to widen my networks through collaboration with colleagues from different research institutions (TU Munich – Germany, Utrecht Univ – The Netherlands, ITQ Univ Valencia – Spain, Oxford Univ – The UK). This project has also supported me to spend some great time in enhancing my scientific capacity through secondment (research stay) in Inorganic Chemistry Oxford Univ. A lot of workshops and conferences are also part of the support provided by this MSCA fellowship.

general website of MSCA can be found here

website for DEFNET project can be found here

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Erasmus Mundus

Erasmus Mundus is a scholarship offered by the European Union consortium that offers funding to carry out master and/or doctoral degrees in European Union countries. Recently, the program changed its name to Erasmus plus. I was awarded Erasmus Mundus scholarship 2012-2014 to carry out master of Functional Advanced Materials Engineering (FAME). This master program offeres the opportunity to study at 7 universities in Europe (Augsburg Univ and TU Darmstadt in Germany, Univ Aveiro in Portugal, Univ of Liége and KU Louvain in Belgium, Univ of Bordeaux and INP Grenoble in France). In my case, this program has given me opportunity to study 1st year master at Institut National Polithecnique Grenoble (INPG) in France and 2nd year master at Technische Universitat Darmstadt in Germany. Through this program, it has widen my network particularly in the European research institutes and broaden my network through collaboration with different colleagues around Europe.

General website for Erasmus plus can be found here

General website for master program in Functional Advanced Materials Engineering (FAME) can be found here  and here

 

 

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Literature Review on Electrical Characterization Techniques of Dielectrics

The main purpose of the report to analyze electrical characterization techniques dedicated to the understanding of dielectric behavior. The scope of the report is to introduce several characterization techniques used for measuring and analyzing the types of leakage current mechanisms and breakdown mechanisms that occur. Dielectric measurement techniques are also introduced briefly.
Dielectrics are insulators that undergo polarization in the presence of an electric field. Polarization processes include: electrical, ionic and dipole polarization. Due to the ability to get polarized, dielectrics have many uses, including increasing the capacitance of a capacitor.
Several leakage mechanisms are analyzed in this report including the Fowler-Nordheim, Hopping, Schottky, Poole-Frenkel, and space charge driven mechanism. Where analysis of these mechanisms is achieved utilizing the mentioned characterization techniques: TSDC, I-t, I-V, C-V, and FBT techniques. Dielectric measurement techniques are also mentioned in the body of the report, which include: transmission/reflection line, open-ended coaxial probe, and the free space method. One main conclusion made here was that the free-space method has advantages over the other methods as it allows for reflection and transmission measurements without physical contact wit the sample.

TSDC

 

If you are interested for further information and a complete document, please leave your inquiry in the reply box.

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Computer Simulation for The Behavior Of Magnetic Materials

Grenoble, May 12th, 2013

magnetic

The aim of the report is to analyze the behavior of magnetic materials using computer simulations. The scope of the report is to understand how the spins in a ferromagnetic and antiferromagnetic material behave. In addition to that, the effect of temperature and external magnetic field are also taken into account to understand how the spins behave under the influence of those effects.

Modeling is a useful technique to solve the problem close to the real phenomena. A simple calculation technique (analytical theory) sometimes is not sufficient to approximate the real phenomena. Therefore, modeling (computer simulations) exist to bridge between the experimental and analytical theory. In this case, the simulations are based on Metropolis Algorithm generated from Monte-Carlo method. The model used is generaly known as the Ising Model.

The conclusions are that modeling technique (using Matlab) is able to simulate homogenous spins direction of a ferromagnetic material under low temperature and its homogeneity decreases as temperature increases. At the critical temperature (Curie temperature), the net magnetization is zero as the spins orient to any directions. Meanwhile, for an antiferromagnetic material, the spins direction is not affected by the temperature. The effect of external magnetic field showed that the spins direction changes its direction towards the direction of the external magnetic field as the amount of external magnetic field increases. It is also found that the susceptibility is 0.8608 and the value of C is 2.9062.

If you are interested for further information and a complete document, please download it here: Report Modeling – Rifan HARDIAN – FAME

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Photo-electrochemistry and Raman spectroscopy as a Characterization Tool of Electronic, Optical and Chemical Properties of Semiconducting Compounds

The main purpose of the report to analyze Photo-electrochemistry and Raman spectroscopy as a characterization tool of electronic, optical, chemical properties of semiconducting compounds. The scope of the report is to introduce several oxide samples to characterize with both techniques.

Using both tools allows characterizing samples as amorphous or crystalline, while also determining the type, transition and bandgap of the semiconducting sample. Experiments from bulk materials to Nano metric films are possible where it is important to like the properties of the material with its specific fabrication process: high temperature oxidation, resistance in nuclear or petrochemical environments and so on.

With Raman, a sample of SiC and an oxidized layer of 690 stainless steel are analyzed. For photo-electrochemistry a sample of TiO2 is analyzed, and the same oxidized layer of 690 stainless steel.

The main conclusion was that 12 phases were found using both Raman spectroscopy and in photo-electrochemistry for the oxidized layer of 690 stainless steel sample.

The main recommendation is to increase the number of maps done with Raman spectroscopy, as the sample space used for the oxidized layer of stainless steel was not sufficient to characterize the whole sample.

If you are interested for further complete information and full documents, please contact me through this message box.

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