The main purpose of the report to analyze Photo-electrochemistry and Raman spectroscopy as a characterization tool of electronic, optical, chemical properties of semiconducting compounds. The scope of the report is to introduce several oxide samples to characterize with both techniques.
Using both tools allows characterizing samples as amorphous or crystalline, while also determining the type, transition and bandgap of the semiconducting sample. Experiments from bulk materials to Nano metric films are possible where it is important to like the properties of the material with its specific fabrication process: high temperature oxidation, resistance in nuclear or petrochemical environments and so on.
With Raman, a sample of SiC and an oxidized layer of 690 stainless steel are analyzed. For photo-electrochemistry a sample of TiO2 is analyzed, and the same oxidized layer of 690 stainless steel.
The main conclusion was that 12 phases were found using both Raman spectroscopy and in photo-electrochemistry for the oxidized layer of 690 stainless steel sample.
The main recommendation is to increase the number of maps done with Raman spectroscopy, as the sample space used for the oxidized layer of stainless steel was not sufficient to characterize the whole sample.
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